This post explains for the MOSFET.
The Part Number is DFF2N60.
The function of this semiconductor is 600V, 2.4A, N-Channel MOSFET.
The package is TO-220F Type
Preview images :
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F PAK pkg is well suited for charger SMPS and small power inverter application.
An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.
1. High ruggedness
2. RDS(on) (Max 5.5 Ω )@VGS=10V
3. Gate Charge (Typical 15nC)
4. Improved dv/dt Capability
5. 100% Avalanche Tested
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 1.5 A
4. Total Power Dissipation: Pd =28 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C