FDC6303N Datasheet – 25V, MOSFET Array, SOT-23

Part Number : FDC6303N

Function : Digital FET, Dual N-Channel

Package : SOT-23-6 Type

Manufacturers : Fairchild Semiconductor

Image and Pinouts :

FDC6303N datasheet

 

Description :

These dual N-Channel logic level enhancement mode  field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.Thisdevice has been designed especially for low voltage applications as a replacement for digital transistors in load switchingapplications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

 

Features :

1. 25 V, 0.68 A continuous, 2 A Peak.
(1) RDS(ON) = 0.6 W @ VGS = 2.7 V
(2) RDS(ON) = 0.45 W @ VGS= 4.5 V.

2. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.

3. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

4. Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 25 V

2. Gate to source voltage : VGSS = 8 V

3. Drain current : ID = 0.68 A

4. Maximum Power Dissipation : Pd = 0.9 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : FDC6303

 

FDC6303N Datasheet PDF Download


FDC6303N pdf