Part Number: FDN335N, Marking : 335
Function: N-Channel 2.5V Specified PowerTrench MOSFET
Package: SuperSOT-3 Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description:
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
• 1.7 A, 20 V. Rds(on)= 0.07 Ω @ Vgs= 4.5 V Rds(on)= 0.100 Ω @ Vgs= 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low Rds(on)
• High power and current handling capability.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 20 V
2. Gate to source voltage: VGSS = ± 8 V
3. Drain current: ID = 1.7 A
4. Power Dissipation: Pd = 0.5 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: FDN335
FDN335N Datasheet PDF Download
