FDN335N Datasheet – 20V, 1.7A, N-Ch, MOSFET ( PDF )

Part Number: FDN335N, Marking : 335

Function: N-Channel 2.5V Specified PowerTrench MOSFET

Package: SuperSOT-3 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDN335N datasheet

 

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.

Features

• 1.7 A, 20 V. Rds(on)= 0.07 Ω @ Vgs= 4.5 V Rds(on)= 0.100 Ω @ Vgs= 2.5 V.

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely low Rds(on)

• High power and current handling capability.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 8 V

3. Drain current: ID = 1.7 A

4. Power Dissipation: Pd = 0.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: FDN335

 

FDN335N Datasheet PDF Download


FDN335N pdf