Part Number: FDV302P
Function: – 25V, – 0.12A, Digital FET, P-Channel, Transistor
Package: SOT-23 Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description:
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage
applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
Features:
1. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
2. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
3. Compact industry standard SOT-23 surface mount package.
4. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 25 V
2. Gate to source voltage: VGSS = ± 8 V
3. Drain current: ID = – 0.12 A
4. Maximum Power Dissipation: Pd = 0.35 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: FDV302
FDV302P Datasheet PDF Download
