FQD2N60C Datasheet – 600V, N-Ch, MOSFET, Transistor

Part Number : FQD2N60C

Function : N-Channel MOSFET / 600V, 1,9A, 4.7 Ohm

Package : D-PAK, I-PAK

Manufacturers : Fairchild Semiconductor

Pinouts :

FQD2N60C datasheet

Description :

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

1. 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
2. Low Gate Charge (Typ. 8.5 nC)
3. Low Crss (Typ. 4.3 pF)
4. 100% Avalanche Tested
5. RoHS Compliant

 

Other data sheets within the file :

FQU2N60C, FQD2N60CTF, FQD2N60CTM, FQU2N60C, FQU2N60CTU, FQD2N60CTM

FQD2N60C Datasheet PDF Download

FQD2N60C pdf