FQP10N20C Datasheet PDF – 200V, N-Ch, MOSFET

Part Number : FQP10N20C

Function : N-Channel QFET® MOSFET

Package : TO-220, TO-220F

Manufacturers : Fairchild Semiconductor

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FQP10N20C datasheet


Description :

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp
Text :

FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. TM Features • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage – Continuous (TC = 25°C) Drain Current – Continuous (TC = 100°C) Drain Current – Pulsed (Note 1) FQP10N20C 9.5 6.0 38 FQPF10N20C 200 9.5 * 6.0 * 38 * ± 30 210 9.5 7.2 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) – Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8″ from case for 5 seconds 72 0.57 -55 to +150 300 38 0.3 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP10N20C 1.74 0.5 62.5 FQPF10N20C 3.33 -62.5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, March 2003 …

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