FQP12N60C Datasheet – 600V, N-Ch QFET MOSFET

Part Number : FQP12N60C

Function : 600 V, 12 A, 650 mΩ, N-Channel QFET MOSFET

Package : TO 220 Type

Manufactures : Fairchild, ONSemiconductor

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FQP12N60C QFET MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Pinout

FQP12N60C pinout

FEATURES

• 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 21 pF)
• 100% Avalanche Tested

Absolute Maximum Ratings

1. Drain-Source Voltage : VDSS  = 600 V
2. Drain Current – Continuous (TC = 25°C) : ID = 12A
3. Drain Current – Pulsed : IDM = 48 A
4. Gate-Source voltage : VGSS= ± 30 V
5. Single Pulsed Avalanche Energy : EAS = 870 mJ
6. Avalanche Current : IAR = 12 A
7. Repetitive Avalanche Energy : EAR = 22.5 mJ
8. Peak Diode Recovery dv/dt : dv/dt = 4.5 V/ns
9. Power Dissipation (TC = 25°C) : PD = 225 W

 

FQP12N60C Datasheet