Part Number: FQP13N10
Function: N-Channel QFET MOSFET, ( 100V, 12.8 A, 180 mΩ )
Package: TO-220 Type
Manufacturer: Fairchild, ON Semiconductor
Image and Pinouts:
Description
This is 100V, 12.8A, N-Channel MOSFET.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
1. 12.8 A, 100 V, Rds(on)= 180 mΩ(Max.) @ Vgs= 10 V, Id= 6.4 A
2. Low Gate Charge (Typ. 12 nC)
3. Low Crss (Typ. 20 pF)
4. 100% Avalanche Tested
5. 175°C Maximum Junction Temperature Rating
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 12.8 A (Tc = 25°C)
4. Drain Power Dissipation: Pd = 65 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: FQP-13N10
FQP13N10 Datasheet PDF Download
