Part Number: FQPF2N90
Function: 900V, N-Channel MOSFET
Package: TO-220F type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
This is 900V, 1.4A, N-Channel MOSFET.
These N-Channel enhancement mode power field effect transistors are produced using Fairchid’s proprietary, planar stripe, DMOS technolgoy. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
1. 1.4A, 900V, Rds(on) = 7.2Ohm @ Vgs =10V
2. Low gate charge (typical 12 nC)
3. Low Crss (typical 5.5 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 1.4 A (Tc = 25°C)
4. Power Dissipation: Pd = 35 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: FQPF-2N90, FQPF2N90, 2N90
FQPF2N90 Datasheet PDF Download
