FU9024N PDF Datasheet – 55V, 11A, MOSFET – IRFU9024N

This post explains for the MOSFET.

The Part Number is FU9024N, IRFU9024N.

The function of this semiconductor is P-Channel MOSFET.

The package is TO-252AA, TO-251AA Type

Manufacturers : International Rectifier

Image :

FU9024N mosfet

Pinout : 1. Gate 2. Drain 3. Source 4. Drain

 

Description :

The FU9024N is -55V, -11A, P-Channel HEXFET Power MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

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FU9024N image

Features :

1. Ultra Low On-Resistance

2. P-Channel

3. Surface Mount (IRFR9024N)

4. Straight Lead (IRFU9024N)

5. Advanced Process Technology

6. Fast Switching

7. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = – 55 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = – 11 A (Tc = 25°C)

4. Power Dissipation : Pd = 38 W  (Tc = 25°C)

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

FU9024N Datasheet PDF


FU9024N pdf