FU9024N PDF Datasheet – 55V, 11A, MOSFET – IRFU9024N

This post explains for the MOSFET.

The Part Number is FU9024N, IRFU9024N.

The function of this semiconductor is P-Channel MOSFET.

The package is TO-252AA, TO-251AA Type

Manufacturer: International Rectifier


FU9024N mosfet

Pinout : 1. Gate 2. Drain 3. Source 4. Drain



The FU9024N is -55V, -11A, P-Channel HEXFET Power MOSFET. A P-channel HEXFET Power MOSFET is a type of power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-performance switching and amplification of electrical signals. The “P-channel” designation indicates that it is a type of MOSFET with a P-channel enhancement mode, which means it conducts current when a negative voltage is applied to its gate terminal.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

1.HEXFET Technology: HEXFET stands for “Hexagonal Flat Package Enhancement-Mode MOSFET.” It’s a trademarked technology developed by International Rectifier (now part of Infineon Technologies) that is known for providing high-performance characteristics, including low on-resistance (RDS(on)) and fast switching speeds.


FU9024N pdf datasheet


1. Ultra Low On-Resistance

2. P-Channel

3. Surface Mount (IRFR9024N)

4. Straight Lead (IRFU9024N)

5. Advanced Process Technology

6. Fast Switching

7. Fully Avalanche Rated


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 55 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 11 A (Tc = 25°C)

4. Power Dissipation: Pd = 38 W  (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

FU9024N PDF Datasheet

FU9024N pdf