G40N60A4 PDF – 600V, IGBT, HGTG40N60A4

Part Number: G40N60A4

Function: 600V, N-Channel IGBT

Package: TO-247 Type

Manufacturer: Fairchild Semiconductor


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G40N60A4 image


HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49347. Features • 100kHz Operation At 390V, 40A • 200kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time .55ns at TJ = 125o • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG40N60A4 PACKAGE TO-247 BRAND 40N60A4 COLLECTOR (BACK METAL) NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2 www.DataSheet.in HGTG40N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60A4 Collector to Emitter Voltage . .BVCES Collector Current Continuous At TC = 25oC . IC25 At TC = 110oC . IC110 Collector Current Pulsed (Note 1) . ICM Gate to Emitter Voltage Continuous . VGES Gate to Emitter Voltage Pulsed . .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 SSOA Power Dissipation Total at TC = 25oC . PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Solder […]

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G40N60A4 Datasheet