G4BC20F Datasheet PDF - 600V, 9A, IGBT, Transistor

Part Number: G4BC20F

Function: 600V, 9A, Fast Speed IGBT

Package: TO-220AB Type

Image and Pinouts:

Description

This is 600V, 9A, Fast IGBT ( insulated-gate bipolar transistor ).

1. Fast : Optimized for medium operating frequencies

2. Generation 4 IGBT design provieds tighter parameter distribution and higher efficiency than Generation 3

3. Industry standard TO-220AB Package.

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: IRG4BC20FDPBF, IRG4BC20F