G4BC20KD PDF Datasheet – 600V, IGBT – IRG4BC20KD

This post explains for the semiconductor G4BC20KD.

The Part Number is IRG4BC20KD.

The function of this semiconductor is 600V, IGBT.

Manufacturer: International Rectifier

Preview images :

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G4BC20KD image

Description

THIS IS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits

• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC20KD2 and IRGBC20MD2 products

• For hints see design tip 97003 TO-220AB Absolute Maximum […]

 

G4BC20KD Datasheet