G4PC50W Datasheet PDF – 600V, 27A, IGBT, IRG4PC50W – IR

Part Number: IRG4PC50W, Marking : G4PC50W

Function: 600V, 27A, IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier


G4PC50W igbt


The G4PC50W is 600V, 27A, Insulated Gate Bipolar Transistor.


1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability


G4PC50W datasheet pinout

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 27 A (Tc = 100°C)

4. Maximum Power  Dissipation: Pd = 78 W (Tc = 100°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC50W Datasheet PDF


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