Part Number: G4PF50W, IRG4PF50W
Function: 900V, 51A, IGBT, Transistor
Package: TO-247AC type
Manufacturer: International Rectifier
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Description
This is 900V, 51A, IGBT. The IGBT is insulated-gate bipolar transistor.
Features
1. Optimized for use in Welding and Switch-Mode Power Supply applications
2. Industry benchmark switching losses improve efficiency of all power supply topologies
3. 50% reduction of Eoff parameter
4. Low IGBT conduction losses
5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 900 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 51 A (Tc = 25°C)
4. Collector dissipation : Pc = 200 W (Tc = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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