Part Number: G4PH40UD, IRG4PH40UD
Function: 1200V, UltraFast CoPack IGBT
Package: TO-247AC Type
Manufacturer: International Rectifier
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Description
PD- 91621B IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 41 21 82 82 8.0 130 ± 20 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case – IGBT Junction-to-Case – Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.77 1.7 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 7/7/2000 IRG4PH40UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 — Temperature Coeff. of Breakdown Voltage — 0.43 Collector-to-Emitter Saturation Voltage — 2.43 — 2.97 — 2.47 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance T 16 24 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 2.6 — 2.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 3.1 IC = 21A VGE = 15V — V IC = 41A See Fig. 2, 5 — IC = 21A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 21A 250 µA VGE = 0V, VCE = 600V 5000 VGE = 0V, VCE = 600V, TJ = 150°C 3.3 V IC = 8.0A See Fig. 13 3.1 IC = 8.0A, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Q […]
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