G4PH50UD PDF Datasheet – 1200V, IGBT – IRG4PH50UD

This post explains for the IGBT.

The Part Number is G4PH50UD, IRG4PH50UD.

The function of this semiconductor is 1200V, 24A, UltraFast CoPack IGBT.

The packag is TO-247AC Type

Manufacturer: International Rectifier

Preview images :G4PH50UD pdf pinout

Description

G4PH50UD IS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

G4PH50UD datasheet igbt

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to Emitter Voltage: Vces = 1200 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 45 A

4. Drain power dissipation: PD = 200 W

5. Operating Junction Temperature: Tch = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Benefits:

• Higher switching frequency capability than competitive IGBTs

• Highest efficiency available

• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing

 

G4PH50UD PDF Datasheet