Part Number: G5N150UF, SGS5N150UF
Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )
Package: TO-220F Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description:
This is IGBT. Fairchild’s Insulated Gate Bipolar Transistor
Features:
1. High Speed Switching
2. Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A
3. High Input Impedance
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1500 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 10 A
4. Maximum Power Dissipation : Pc = 50 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Application:
1. Switching Power Supply
2. High Input Voltage Off-line Converter
Other data sheets are available within the file: SGS5N150UF, SGS5N150UFTU
G5N150UF Datasheet PDF
