G7S313UPBF Datasheet – 330V, 40A, IGBT, Transistor

Part Number : G7S313UPBF

Function : 330V, 40A, PDP TRENCH IGBT

Package : D2PAK Type

Manufacturers : International Rectifier

Pinouts :

G7S313UPBF datasheet

Description :

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery

circuits in PDP applications

Low VCE(on) and Energy per Pulse (EPULSE


for improved panel efficiency

High repetitive peak current capability

Lead Free package

Other data sheets within the file : IRG7S313UPBF

G7S313UPBF Datasheet PDF Download

G7S313UPBF pdf