Part Number: G7S313UPBF, G7S313U
Function: 330V, 40A, PDP TRENCH IGBT
Package: D2PAK Type
Manufacturer: International Rectifier
Image and Pinouts:
Description
The G7S313UPBF is 330V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Features
1. Advanced Trench IGBT Technology
2. Optimized for Sustain and Energy Recovery circuits in PDP applications
3. Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency
4. High repetitive peak current capability
5. Lead Free package
Other data sheets are available within the file: IRG7S313UPBF
G7S313UPBF Datasheet PDF Download
