G80N60 Datasheet – 660V, Ultrafast IGBT – Fairchild

This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.

This part name is G80N60.

This product has Ultrafast IGBT ( Vces = 600V ) functions.

Manufacturers of product is Fairchild Semiconductor.

See the preview image and the PDF file for more information.

Image :

G80N60 image


Description :

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs

) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G80N60 datasheet pinout


1. High speed switching
2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A
3. High input impedance
4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

Absolute Maximum Ratings TC = 25°C

1. Collector-Emitter Voltage : Vces = 600 V
2. Gate-Emitter Voltage : Vges = ± 20 V
3. Collector Current : Ic = 80 A
4. Maximum Power Dissipation : Pd = 195 W


AC & DC motor controls, general purpose inverters, robotics, and servo controls.


G80N60 Datasheet PDF Download

G80N60 pdf


Other data sheets within the file :  G80N60UFD, SGH80N60UFD