G80N60UFD Datasheet PDF - 600V, Ultrafast IGBT

Part Number: G80N60UFD

Function: Ultrafast IGBT ( Vces = 600V )

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

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Description

This is 600V, Ultrafast IGBT.

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs

) provides low conduction and switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Pinouts:

Features

1. High speed switching

2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A

3. High input impedance

4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 80 A

4. Maximum Power Dissipation: Pd = 195 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

Other data sheets are available within the file: G80N60, SGH80N60UFD