Part Number: GFP60N03
Function: 30V, 60A, N-Channel Enhancement-Mode MOSFET
Package: TO-220AB Type
Manufacturer: General Semiconductor
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Description
The GFP60N03 is N-Channel Enhancement-Mode MOSFET.
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Mechanical Data :
1. Case : JEDEC TO-220AB molded plastic body
2. Terminals : Leads solderable per MIL-STD-750, Method 2026
3. High temperature soldering guaranteed : 250°C/10 seconds at terminals
4. Mounting Torque : 10 in-lbs maximum
5. Weight : 2.0g
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 60 A
4. Maximum Power Dissipation: Pd = 62.5 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C