Part Number: GQ90N33
Function: 330V, 90A, IGBT, Trench Gate, High Speed
Package: TO-3P Type, TO-263AA Type
Manufacturer: IXYS CORPORATION
Image and Pinouts:
Description
This is 330V, High Speed IGBT. The IGBT is insulated-gate bipolar transistor.
Features
• Low V CE(sat) – for minimum On-State Conduction Losses
• Fast Switching
Maximum Ratings :
1. VCES TJ = 25°C to 150°C 330 V
2. VGES Continuous ±20 V
3. VGEM Transient ±30 V
4. IC25 TC= 25°C (Chip Capability) 90 A
5. IC(RMS) Lead Current Limit 75 A
6. IC110 TC = 110°C 38 A
7. ICP TC < 150°C, tp < 10μs 60 A
8. ICP TC < 150°C, tp < 10μs, Duty cycle < 1% 360 A
9. PC TC = 25°C 200 W
10. TJ -55 … +150 °C
11. TJM 150 °C
12. Tstg -55 … +150 °C
13. TL Maximum Lead Temperature for Soldering 300 °C
14. TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Other data sheets are available within the file:
GA90N33TC, GQ90N33TC, GQ90N33TCD1, IXGA90N33TC,
IXGQ90N33TC, IXGQ90N33TCD1
GQ90N33 Datasheet PDF Download
