Part Number : GT60N321
Function : The 4th Generation IGBT, 1000V, 60A
Pakcage : TO-3P(LH) Type
Description : High Power Switching Applications
Manufactures : Toshiba Semiconductor
Image : 
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf= 0.25 μs (typ.) (IC= 60 A)
FRD : trr= 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat)= 2.3 V (typ.) (IC= 60 A)
GT60N321 Datasheet
