GT60N321 Datasheet – 1000V, 60A, IGBT – Toshiba

Part Number: GT60N321

Function: The 4th Generation IGBT, 1000V, 60A

Pakcage : TO-3P(LH) Type

Description: High Power Switching Applications

Manufacturer: Toshiba Semiconductor

Image: GT60N321

Description:

This is 1000V, 60A, Fourth Generation IGBT.

Features:

•  FRD included between emitter and collector
•  Enhancement mode type
•  High speed  IGBT : tf= 0.25 μs (typ.) (IC= 60 A), FRD : trr= 0.8 μs (typ.) (di/dt = −20 A/μs)
•  Low saturation voltage: VCE (sat)= 2.3 V (typ.) (IC= 60 A)

GT60N321 Datasheet

GT60N321 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Emitter Voltage : VCES = 1000 V

2. Collector Current : IC = 60 A

3. Collector Power Dissipation (Tc = 25°C) : Pc = 170 W

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Power Switching