Part Number: GT60N321
Function: The 4th Generation IGBT, 1000V, 60A
Pakcage : TO-3P(LH) Type
Description: High Power Switching Applications
Manufacturer: Toshiba Semiconductor
Image: 
Description:
This is 1000V, 60A, Fourth Generation IGBT.
Features:
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf= 0.25 μs (typ.) (IC= 60 A), FRD : trr= 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat)= 2.3 V (typ.) (IC= 60 A)
GT60N321 Datasheet
Absolute Maximum Ratings (Ta = 25°C)
1. Collector-Emitter Voltage : VCES = 1000 V
2. Collector Current : IC = 60 A
3. Collector Power Dissipation (Tc = 25°C) : Pc = 170 W
4. Channel temperature: Tch = 150 °C
5. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Power Switching