GT60N321 Datasheet – 1000V 60A IGBT – Toshiba

Part Number : GT60N321

Function : The 4th Generation IGBT, 1000V, 60A

Pakcage : TO-3P(LH) Type

Description : High Power Switching Applications

Manufactures : Toshiba Semiconductor

Image : GT60N321

•  FRD included between emitter and collector
•  Enhancement mode type
•  High speed  IGBT : tf= 0.25 μs (typ.) (IC= 60 A)
FRD : trr= 0.8 μs (typ.) (di/dt = −20 A/μs)
•  Low saturation voltage: VCE (sat)= 2.3 V (typ.) (IC= 60 A)

GT60N321 Datasheet

GT60N321 Datasheet