GW60V60DF Datasheet PDF – 600V, 60A, IGBT, Transistor

Part Number: GW60V60DF, STGW60V60DF

Function: 600V, 60A, IGBT ( Transistor )

Package: TO-247, TO-3P type

Manufacturer: STMicroelectronics ( )


GW60V60DF datasheet igbt


The IGBT is insulated-gate bipolar transistor.

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.


GW60V60DF transistor pinout


• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode


• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters


Other data sheets are available within the file: STGW60V60DF, STGWA60V60DF, STGWT60V60DF,

G60V60DF, GWT60V60DF

GW60V60DF Datasheet PDF Download

GW60V60DF pdf

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