Part Number: IHW15N120R2, Marking : H15R1202
Function: 1200V, 15A, IGBT with monolithic body diode
Package: TO-247 type
Manufacturer: Infineon Technologies
Image and Pinouts:
Description
This is Vce = 1200V, Ic = 15A, Reverse Conducting IGBT.
Features
1. Powerful monolithic Body Diode with very low forward voltage
2. Body diode clamps negative voltages
3. Trench and Fieldstop technology for 1200 V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior
4. Low EMI
5. Qualified according to JEDEC1 for target applications
6. Pb-free lead plating; RoHS compliant
7. Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1200 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 30 A
4. Power dissipation : Ptot = 357 W
5. Storage temperature: Tstg = -55 to +1575 °C
Applications:
1. Inductive Cooking
2. Soft Switching Applications
Other data sheets are available within the file: IHW15N120R2
H15R1202 Datasheet PDF Download
