H20R1202 Datasheet – 1200V, 20A, IGBT – Infineon

This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.

Part Number : IHW20N120R2

Marking : H20R1202

Package : TO-247 Type

Function : Reverse Conducting IGBT with monolithic body diode / Vce = 1200V / Ic =20A

Manufacturers : Infineon Technologies

Pinouts :
H20R1202 Pinout

Description :

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• TrenchStop and Fieldstop technology for 1200 V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

Applications

• Inductive Cooking

• Soft Switching Applications

 

Absolute maximum ratings ( Tc=25°C )

1. Collector-emitter voltage : Vce = 1200 V
2. DC collector current : Ic = 40 A
3. Gate-emitter voltage : Vge = ± 20 V
4. Power dissipation : Ptot = 330 W

 

H20R1202 Datasheet