H27U2G8F2C PDF Datasheet – 2 Gbit NAND Flash

Part Number : H27U2G8F2C

Function : 2 Gbit (256M x 8 bit) NAND Flash

Package : TSSOP 48 Pin Type

Manufactures : Hynix

Images :

2 page
pinout

Description :

H27U2G8F2C series is a 256Mx8bit with spare 8Mx8 bit capacity.  The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased

 

H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash Document Title 2 Gbit (256M x 8 bit) NAND Flash Memory Revision History Revision  History Initial Draft Add FBGA Package Draft Date Apr. 19. 2010 May. 28. 2010 Remark Preliminary Rev 0.0 / Apr. 2010 2 *da93e538-013c- B34416/177.179.157.84/2010-06-28 11:19 APCPCWM_1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash Features SUMMARY DENSITY – 2Gbit: 2048blocks Nand FLASH INTERFACE – NAND Interface – ADDRESS / DATA Multiplexing SUPPLY VOLTAGE – Vcc = 3.0/1.8V Volt core supply voltage for Program, Erase and Read operations. MEMORY CELL ARRAY – X8: (2K + 64) bytes x 64 pages x 2048 blocks – X16: (1k+32) words x 64 pages x 2048 blocks PAGE SIZE – X8: (2048 + 64 spare) bytes – X16:(1024 + 32spare) Words Block SIZE – X8: (128K + 4K spare) bytes – X16:(64K + 2K spare) Words PAGE READ / PROGRAM – Random access: 25us (Max) – Sequential access: 25ns / 45ns (3.0V/1.8V, min.) – Program time(3.0V/1.8V): 200us / 250us (Typ) – Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.) BLOCK ERASE / MULTIPLE BLOCK ERASE – Block erase time: 3.5 ms (Typ) – Multi-block erase time (2 blocks): 3.5ms/ 3.5ms (3.0V/1.8V, Typ.) SEQURITY – OTP area – Sreial number (unique ID) – Non-volatile protection option for OTP and Block0(Opt.) – Hardware program/erase disabled during power transition ADDTIONAL FEATURE – Multiplane Architecture: Array is split into two independent planes. Parallel operations on both planes are available, having program and erase time. – Single and multiplane copy back program with automatic EDC (error detection code) – Single and multiplane page re-program – Single and multiplane cache program – Cache read – Multiplane block erase Reliability – 100,000 Program / Erase cycles (with 1bit /528Byte ECC) – 10 Year Data retention ONFI 1.0 COMPLIANT COMMAND SET ELECTRONICAL SIGNATURE – Munufacture ID: ADh – Device ID PACKAGE – Lead/Halogen Free – TSOP48 12 x 20 x 1.2 mm – FBGA63 9 x 11 x 1.0 mm Rev 0.0 / Apr. 2010 3 *da93e538-013c- B34416/177.179.157.84/2010-06-28 11:19 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash CONTENTS 1 Summary Description..5 1.1 Product List..6 1.2 Pinescription….. […]

 

H27U2G8F2C Datasheet