H27UBG8T2CTR Datasheet – 32Gb MLC NAND Flash – SK Hynix

Part Number : H27UBG8T2CTR, H27UBG8T2CTR-BC

Function : 32Gb(4096M x 8bit) Legacy MLC NAND Flash Memory

Package : TSOP-48/SDP Type

Manufacturers : SK Hynix

Image :

H27UBG8T2CTR nand flash memory

Description :

OPERATING RANG : 2.7 to 3.6V

The product part NO.H27UBG8T2CTR-BC is a single 3.3V 32Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 1,044 blocks. Each block consists of 256 programmable pages. Each page contains 8,832 bytes. The pages are subdivided into an 8,192 byte main data storage area with a spare 640 byte district. Page program operation can be performed in typical 1,500us, and a single block can be erased in typical 5ms

Pinout

H27UBG8T2CTR datasheet pinout
Features

1. Multi Level Cell(MLC) Technology

2. NAND Interface
– x8 bus width
– Multiplexed address/data
– Pin-out compatibility for all densities

3. Supply Voltage
– Vcc = 2.7 V ~ 3.6 V

4. Organization
– Page size : 8832 (8192+640spare)bytes
– Block size : 256 pages (2M+160K)bytes
– Plane size : 1024 + 22 blocks
– Device size : 2048 + 44 Blocks

5. Page Read Time
– Random Read Time(tR) : 60us / 80 us (Typ. / Max.)
– Sequential Access(tRC/tWC) : 16ns (Min.)

6. Write Time
– Page program : 1500us(Typ.)

7. Block Erase Time
– Block erase : 5ms (Typ.)

8. Multi-Plane Architecture
– Two independent planes architecture
– Parallel operations on both planes available, effectively halving program, read and erase time

 

H27UBG8T2CTR Datasheet PDF