H27UCG8T2ETR Datasheet – 64Gb MLC NAND Flash Memory

Part Number : H27UCG8T2ETR

Function : 64Gbit(8192M x 8bit) Legacy NAND Flash Memory

Package : TSOP 48 Pin ( 12mm x 20mm x 1.2mm )

Manufactures : Hynix

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H27UCG8T2ETR datasheet NAND Flash Memory

Description

The product part NO. H27UCG8T2ATR-BC is a single 3.3V 64Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 2090 blocks. Each block consists of 256 programmable pages. Each page contains 8,832bytes. The pages are subdivided into an 8,192byte main data storage area with a spare 640byte district. Page program operation can be performed in typical 1500us, and a single block can be erased in typical 5ms.

Pinout

H27UCG8T2ETR pinout

Product Feature

■ Multi Level Cell (MLC) Technology
■ Power Supply Voltage
– VCC / VCCq= 2.7V ~ 3.6V
■ Organization
– Page Size : 8192 + 640(Spare) bytes
– Block Size : 2M + 160K bytes, 256pages
– Plane Size : 2048 + 42(Extended) blocks
– Device Size : 4096 + 84(Extended) blocks
■ Page Read Time
– Random Read Time (tR) : 60/80us(Typ./Max)
– Sequential Access (tRC/tWC) : 16ns(Min.)
■ Page Write Time
– Page Program Time : 1500(Typ.)
■ Block Erase Time
– Block Erase Time : 5.0ms(Typ.)
■ Hardware Data Protection
– Program/Erase locked during power transitions

 

H27UCG8T2ETR Datasheet