HY1606A PDF – N-Ch, 60V, 60A, MOSFET ( Datasheet )

Part Number: HY1606A, HY1606AP

Function: 60V, 60A, N-Channel Enhancement Mode MOSFET

Package: TO-220-3L Type

Manufacturer: HOOYI Semiconductor

Images:HY1606A pinout datasheet



The HY1606A is 60V, 60A, N-Channel Enhancement Mode MOSFET.

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.


1. 60V/ A, RDS(ON) =10.5 mW (typ.) @ VGS =10V

2. Avalanche Rated

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)

5. Power Management for Inverter Systems




Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 65 A

4. Maximum Power Dissipation: Pd = 130 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

HY1606A PDF Datasheet