Part Number : HY1906, HY1906P, HY1906B
Manufactuers : HOOYI Semiconductor
Package : TO-220FB-3L
Function : N-Channel Enhancement Mode MOSFET
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Features
1. 60V / 120 A , R DS(ON) = 6.0 mW (typ. ) @ V GS = 10V
2. Avala nche Rated
3. Reli able and Rugged
4. Lead Free and Green Devices Available (RoHS Compli ant)
Applications
1. Power Management for Inverter Systems.
Absolute Maximum Ratings
1. Drain-Source Voltage : Vdss = 60 V
2. Gate-Source Voltage : Vgss = ±25 V
3. Diode Continuous Forward Current : Is = 120 A
HY1906 Datasheet
Datasheet Download : [ HY1906.PDF Datasheet ]
