Part Number : HY1906, HY1906P, HY1906B
Package : TO-220FB-3L
Function : N-Channel Enhancement Mode MOSFET
Manufactuers : HOOYI Semiconductor
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Features
1. 60V / 120 A , R DS(ON) = 6.0 mW (typ. ) @ V GS = 10V
2. Avala nche Rated
3. Reli able and Rugged
4. Lead Free and Green Devices Available (RoHS Compli ant)
Applications
1. Power Management for Inverter Systems.
Absolute Maximum Ratings
1. Drain-Source Voltage : Vdss = 60 V
2. Gate-Source Voltage : Vgss = ±25 V
3. Diode Continuous Forward Current : Is = 120 A
4. Maximum Junction Temperature : Tj = 175 °C
HY1906 Datasheet
