Part Number : HY3506
Function : N-Channel Enhancement Mode MOSFET
Package : TO-220FB-3L, TO-263-2L
Manufactures : HOOYI ( http://www.hymexa.com/ )
Images :
Features
1. 60V/190A RDS(ON)= mΩ (typ.) @ VGS=10V
2. Reliable and Rugged
3. Lead Free and Green Devices Available (RoHS Compliant)
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 25 V
3. Maximum Junction Temperature : Tj = 175 °C
4. Storage temperature : Tstg = -55 to +175 °C
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Applications
1. Switching application
2. Power Management for Inverter Systems
Other data sheets within the file : HY3506P, HY3506B
