HY3506P PDF Datasheet – 60V,190A, N-Ch, MOSFET – Hooyi

This post explains for the semiconductor HY3506P.

The Part Number is HY3506P.

The function of this semiconductor is 60V,190A, N-Channel MOSFET.

The package is TO-220, TO-247 Type

Manufacturer: HOOYI Semicondcutor ( www.hooyi-semi.com )

Preview images :

1 page
HY3506P image

Description

This is 60V, 190A, N-Channel Enhancement Mode MOSFET.

Features

1. RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin

2. 100% avalanche tested

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 190 A

4. Maximum Power Dissipation: Pd = 306 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

 

Applications:

1. Switching application

2. Power Management for Inverter Systems

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Other data sheets are available within the file: HY3506, HY3506W

HY3506P PDF Datasheet