Part Number: IKA08N65H5, Marking : K08EEH5
Function: 650V, 10.8A, High speed 5 IGBT in TRENCHSTOP 5 technology
Package: TO-220FP Type
Manufacturer: Infineon Technologies
Image and Pinouts:
Description:
This is 650V, 10.8A, High speed 5 IGBT. The IGBT is insulated-gate bipolar transistor.
High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode. 650V DuoPack IGBT and Diode.
Features and Benefits:
1. Best-in-Class efficiency in hard switching and resonant topologies
2. Plug and play replacement of previous generation IGBTs
3. 650V breakdown voltage
4. Low QG
5. IGBT copacked with RAPID 1 fast and soft antiparallel diode
6. Maximum junction temperature 175°C
7. Qualified according to JEDEC for target applications
8. Pb-free lead plating; RoHS compliant
9. Complete product spectrum and PSpice Models:
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 650 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 10.8 A
4. Power dissipation : Ptot = 31.2 W
5. Operating Junction temperature : Tj = – 40 to 175 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Solar converters
2. Uninterruptible power supplies
3. Welding converters
4. Mid to high range switching frequency converters
Other data sheets are available within the file: 08N65, 08N65H5
IKA08N65H5 Datasheet PDF Download
