Part Number: IRF142
Function: 100V, 24A, N-Channel MOSFET Transistor
Package: TO-3 Type
Manufacturer: Inchange Semiconductor
IRF142 is 100V, 24A, N-Channel MOSFET (INCHANGE Semiconductor).
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
1. Drain Current ID=24A@ TC=25℃
2. Drain Source Voltage- : VDSS= 100V(Min)
3. Static Drain-Source On-Resistance : RDS(on) =0.11Ω(Max)
4. High Power,High Speed Applications
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 24 A
4. Total Power Dissipation: Pd = 125 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
1. Switching power supplies
ELECTRICAL CHARACTERISTICS (TC=25℃) :
SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=24A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Delay Time tf Fall Time ID=15A; VDD=50V; RL=4.7Ω td(off) Turn-off Delay Time isc Product Specification. […]