Part Number : IRF510
Function : N-channel power MOSFET, 100V, 5.6A
Manufacturers : Harris Semiconductor
Pinouts :
Description :
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Other data sheets within the file :
IRF511, IRF512, IRF513, IRF510PBF
IRF510 Datasheet PDF Download
