IRF530N Datasheet – 100V, 17A, HEXFET MOSFET

Part Number : IRF530N

Function : HEXFET power MOSFET

Package : TO-220AB Type

Manufacturers : International Rectifier

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IRF530N MOSFET Transistor

 

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

Pinouts :

IRF530N datasheet

 

FEATURES

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

 

IRF530N Datasheet PDF Download

IRF530N pdf

Other data sheets within the file : IRF530