IRF640 Datasheet – 200V, Mesh Overlay MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRF640, IRF640FP

Function: N-CHANNEL, 200V – 0.15 ohm – 18A  MESH OVERLAY MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: STMicroelectronics




This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.




Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 16 A
4. Drain power dissipation : PD = 136 W
8. Channel temperature: Tch = -55 to +175 °C
9. Storage temperature: Tstg = -55 to +175 °C


1. Extremely high dv/dt capability
2. Very low intrinsic capacitances
3. Gate charge minimized



1. Switching application


IRF640 Datasheet

IRF640 pdf


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