IRF840 Datasheet – N-ch, 500V Power MOSFET – Fairchild

Part Number : IRF840

Function : 500V N-Channel MOSFET

Package : TO-220AB Type

Manufactures : Fairchild Semiconductor


This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425.





1. 8A, 500V

2. rDS(ON) = 0.850 Ω

3. Single Pulse Avalanche Energy Rated

4.SOA is Power Dissipation Limited

5. Nanosecond Switching Speeds

6. Linear Transfer Characteristics

7. High Input Impedance


IRF840 Datasheet

IRF840 pdf