Part Number: IRF9410
Function: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.
Package: SO-8 Type
Manufacturer: International Rectifier
Image and Pinouts:
This is 30V, 7A, HEXFET Power MOSFET.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
1. Generation V Technology
2. Ultra Low On-Resistance
3. N-Channel MOSFET
4. Surface Mount
5. Very Low Gate Charge and Swiching Losses
6. Fully Avalanche Rated
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 7 A
4. Maximum Power Dissipation: Pd = 2.5 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: IRF9410TRPBF, IRF9410PbF