Part Number: IRFD1Z0
Function: 0.5A, 100V, N-Channel Power MOSFET
Package: DIP 4 Pin
Manufacturer: Harris Semiconductor
Pinouts:
Description:
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451.
Absolute Maximum Ratings
1. Drain to Source : Vds = 100 V
2. Drain to Gate Voltage (RGS = 20kW) : Vdgr = 100 V
3. Continuous Drain Current : Id = 0.5 A
4. Pulsed Drain Current : Idm = 4.0 A
5. Maximum Power Dissipation: Pd = 1.0 W
Features
1. 0.5A, 100V
2. rDS(ON) = 2.4W and 3.2W
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8. Related Literature
Other data sheets are available within the file: IRFD1ZO, IRFD1Z1, IRFD1Z2, IRFD1Z3
IRFD1Z0 Datasheet PDF Download
