IRFP250N Datasheet – N-Ch, 200V, 30A, MOSFET (Transistor)

The Part Number is IRFP250N.

The Function is 200V, 30A, N-Channel MOSFET Transistor

The package is  TO-247 Package type

Manufacturer: Inchange Semiconductor


IRFP250N mosfet datasheet


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications


1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements

IRFP250N Pinout

IRFP250N pinout amplifier

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 30 A
4. Drain power dissipation : PD = 214 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C


Fast switching

IRFP250N Datasheet

IRFP250N pdf

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