Part Number : IRFR9024N
Function : HEXFET Power MOSFET
Manufacturers : International Rectifier
Fifth Generation HEXFETs from International Rectifier utilize advanced processing thchinques to achieve extremely low on-resistance per silicon area.
PD – 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -55V RDS(on) = 0.175Ω G S ID = -11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -11 -8 -44 38 0.30 ± 20 62 -6.6 3.8 -10 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)*- Junction-to-Ambient Typ. ––– ––– ––– Max. 3.3 50 110 Units °C/W 6/26/97 IRFR/U9024N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-So …
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