Part Number: IRFV260
Function: HEXFET Transistor / 200 Volt, 0.060 Ohm, HEXFET
Package: TO-258AA Type
Manufacturer: International Rectifier
Image and Pinouts:
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high trans conductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required.
1. Hermetically Sealed
2. Electrically Isolated
3. Simple Drive Requirements
4. Ease of Paralleling
5. Ceramic Eyelets
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 45 A
4. Max. Power Dissipation: Pd = 300 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: IRFV-260