IRFV260 Datasheet PDF – 200V, 45A, N-Ch, MOSFET

Part Number: IRFV260

Function: HEXFET Transistor / 200 Volt, 0.060 Ohm, HEXFET

Package: TO-258AA Type

Manufacturer: International Rectifier

Image and Pinouts:

IRFV260 datasheet

 

Description:

HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high trans conductance.

HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required.

Features:

1. Hermetically Sealed

2. Electrically Isolated

3. Simple Drive Requirements

4. Ease of Paralleling

5. Ceramic Eyelets

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 45 A

4. Max. Power Dissipation: Pd = 300 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRFV-260

 

IRFV260 Datasheet PDF Download


IRFV260 pdf