Part Number: IRFV260
Function: HEXFET Transistor / 200 Volt, 0.060 Ohm, HEXFET
Package: TO-258AA Type
Manufacturer: International Rectifier
Image and Pinouts:
Description:
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high trans conductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required.
Features:
1. Hermetically Sealed
2. Electrically Isolated
3. Simple Drive Requirements
4. Ease of Paralleling
5. Ceramic Eyelets
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 45 A
4. Max. Power Dissipation: Pd = 300 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: IRFV-260
IRFV260 Datasheet PDF Download
