IRG4PC50F-E Datasheet – 600V, 70A, IGBT, Transistor

Part Number : IRG4PC50F-E

Function : 600V, 70A, Fast Speed IGBT

Package : TO-247AD Type

Manufacturers : International Rectifier

Image and Pinouts :

IRG4PC50F-E datasheet

 

Description :

The IRG4PC50F-E is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features :

1. Optimized for medium operating frequencies (1-5 KHz hin hard switching, >20 Khz in resonat mode).

2. Industry standard TO-247AD package

Benefits :

1. Generation 4 IGBT’s offer highest efficiency available

2. IGBT’s optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 600 V

2. Gate to emitter voltage : Vges = ± 20 V

3. Collector current : Ic = 70 A (Tc = 25°C)

4. Maximum Power Dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : IRG4PC50, IRG4PC50FE, IRG4PC50F-EPBF

 

IRG4PC50F-E Datasheet PDF Download


IRG4PC50F-E pdf

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