Part Number: IRG4PC50WPBF
Function: 600V, 55A, N-Ch, INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer: International Rectifier
Pinouts:
Description:
This is 600V, 55A, IGBT. The IGBT is insulated-gate bipolar transistor.
Features:
1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
2. Industry-benchmark switching losses improve efficiency of all power supply topologies
3. 50% reduction of Eoff parameter
4. Low IGBT conduction losses
5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 55 A (Tc = 25°C)
4. Collector Dissipation : Pc = 200 W (Tc = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Benefits :
1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)
2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)
Other data sheets are available within the file: IRG4PC50, IRG4PC50W, IRG4PC50-WPBF
IRG4PC50WPBF Datasheet PDF Download
