IRG4PC50WPBF Datasheet – 600V, 55A,IGBT, Transistor

Part Number : IRG4PC50WPBF

Function : 600V, 55A, N-Ch, INSULATED GATE BIPOLAR TRANSISTOR

Manufacturers : International Rectifier

Pinouts :

IRG4PC50WPBF datasheet

Description :

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Benefits

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Other data sheets within the file : IRG4PC50, IRG4PC50-WPBF

IRG4PC50WPBF Datasheet PDF Download

IRG4PC50WPBF pdf