K10A50D Datasheet PDF – TOSHIBA

Part Number : K10A50D

Function : Silicon N Channel MOS Field Effect Transistor

Package : TO-220 Type

Manufacturers : Toshiba

Product Image :

K10A50D

Description

1. Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 500 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C) : PD = 45 W
4. Single pulse avalanche energy : EAS = 264 mJ
5. Avalanche current : IAR = 10 A
6. Repetitive avalanche energy : EAR = 4.5 mJ

Pinouts :
K10A50D datasheet

Official Site : http://www.semicon.toshiba.co.jp/

Applications

1. Switching Regulator

Other data sheets within the file : K10A500, TK10A50D, TK10A500

K10A50D Datasheet PDF Download

K10A50D pdf