K10A60DR Datasheet PDF – 600V, N-Channel MOSFET

Part Number : K10A60DR

Function : 600V, N-Channel MOSFET

Package : TO-220, SC-67 Type

Manufacturers : Toshiba

Images
K10A60DR datasheet toshiba


Description

Silicon N-Channel MOSFET Transistor

1. Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K10A60DR pinout mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current ( DC ) : ID = 10 A
5. Drain power dissipation (Tc = 25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 363 mJ
7. Avalanche current : IAR = 10 A
9. Repetitive avalanche energy : EAR = 4.5 mJ
10 Channel temperature : Tch = 150 °C
11. Storage temperature range : Tstg = -55 to 150 °C

Other data sheets within the file : TK10A60DR, TK10A60D, K10A60D

K10A60DR Datasheet PDF Download

K10A60DR pdf