Part Number: K10A60DR
Function: 600V, 10A, N-Channel MOSFET
Package: TO-220, SC-67 Type
Manufacturer: Toshiba
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Description
This is 600V, 10A, Silicon N-Channel MOSFET Transistor.
Features
1. Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain current ( DC ) : ID = 10 A
5. Drain power dissipation (Tc = 25°C): PD = 45 W
6. Single pulse avalanche energy : EAS = 363 mJ
7. Avalanche current : IAR = 10 A
9. Repetitive avalanche energy : EAR = 4.5 mJ
10 Channel temperature : Tch = 150 °C
11. Storage temperature range : Tstg = -55 to 150 °C
Other data sheets are available within the file: TK10A60DR, TK10A60D, K10A60D
K10A60DR Datasheet PDF Download
