Part Number : K10A60W, TK10A60W
Function : Silicon N Channel MOS Type Field Effect Transistor
Package : SC-67, 2-10U1B Type
Manufacturers : Toshiba
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Description
1. Low drain-source on-resistance : RDS (ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS
2. Easy to control Gate switching
3. Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 600 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain current (Continuous) : ID = 9.7 A
4. Drain current (Pulsed) : IDP = 38.8 A
5. Drain power dissipation (Tc = 25°C) : PD = 30 W
6. Single pulse avalanche energy : EAS = 69 mJ
7. Avalanche current : IAR = 4.9 A
8. Drain reverse current (Continuous) : IDR = 9.7 A
9. Drain reverse current (Pulsed) : IDRP = 38.8 A
10. Channel temperature : Tch = 150 °C
11. Storage temperature range : Tstg = -55 to 150 °C
12. Isolation voltage (t = 1.0s) : VISO(RMS) = 2000 V
13. Mounting torque : TOR = 0.6 N・m
